Model library for power MOSFETS in switching circuits and converters

Author

Maimouni, R. ; Allain, D. ; Napieralska, M. ; Tranduc, H. ; Rossel, P. ; Cordonnier, C.E.

Author_Institution

LAAS du CNRS, Toulouse, France

fYear

1989

Firstpage

127

Lastpage

130

Abstract

Macromodels for the power VDMOS transistor are proposed in order to simulate its switching characteristics. These macromodels use the SPICE model library and are established for low voltage (60 V) as well as high voltage (1000 V) devices. Three VDMOS power transistor models have been proposed for the simulation of switching circuits. These have been validated by simulation of some energy conversion systems. One of the proposed models takes into account the effect of temperature on the variations of the device parameters

Keywords

convertors; electronic engineering computing; insulated gate field effect transistors; power transistors; semiconductor device models; switching circuits; 1000 V; 60 V; SPICE model library; converters; energy conversion systems; macromodels; power MOSFETS; power VDMOS transistor; switching characteristics; switching circuits; Circuit simulation; Energy conversion; Libraries; Low voltage; MOSFETs; Power system modeling; Power transistors; SPICE; Switching circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 1989. Proceedings. 'Integrating Research, Industry and Education in Energy and Communication Engineering', MELECON '89., Mediterranean

Conference_Location

Lisbon

Type

conf

DOI

10.1109/MELCON.1989.49998

Filename

49998