High-stability 72 GHz Gunn oscillator for the characterization of ultra-high-speed optical receivers based on InP and InSb Schottky diodes

Author

Galzerano, G. ; Svelto, C. ; Carelli, G. ; Beverini, N. ; Moretti, A. ; Finotti, M. ; Bava, E.

Author_Institution

Dipt. di Elettronica e Informazione, Politecnico di Milano, Milan, Italy

Volume

2

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

1139

Abstract

A high-stability 72 GHz Gunn oscillator, to be used as a frequency standard, was realized in order to characterize ultra-high-speed Schottky diodes based on intrinsic InP and InSb semiconductors. The 72 GHz oscillator shows a relative frequency stability of 2×10^-9 for observation times of 10 s and a collapse frequency of 4 THz.

Keywords

Gunn oscillators; III-V semiconductors; Schottky diodes; frequency stability; frequency standards; indium compounds; millimetre wave oscillators; optical receivers; semiconductor device measurement; 10 s; 4 THz; 72 GHz; InP; InSb; Schottky diodes; frequency measurements; frequency standard; high-stability Gunn oscillator; intrinsic InP semiconductors; intrinsic InSb semiconductors; oscillator collapse frequency; oscillator relative frequency stability; ultra-high-speed Schottky diodes; ultra-high-speed optical receivers; Bandwidth; Frequency measurement; Gunn devices; Indium phosphide; Measurement standards; Optical receivers; Oscillators; Schottky diodes; Stability; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 2002. IMTC/2002. Proceedings of the 19th IEEE

ISSN

1091-5281

Print_ISBN

0-7803-7218-2

Type

conf

DOI

10.1109/IMTC.2002.1007117

Filename

1007117