DocumentCode
1670140
Title
Nanoscale SOI ballistic MOSFETs: an impending power crisis
Author
Sverdlov, Viktor ; Naveh, Y. ; Likharev, K.
Author_Institution
State Univ. of New York, Stony Brook, NY, USA
fYear
2001
Firstpage
151
Lastpage
152
Abstract
Recently, we extended our previous modeling study of 10-nm-scale SOI MOSFETs to the calculation of minimum total (static + dynamic) power dissipated in future CMOS circuits based on such devices. The results show a dramatic increase of the power as soon as the gate length is decreased beyond the crossover between the drift-diffusion and ballistic electron transport. The goal of our presentation is to give a brief summary of our findings.
Keywords
CMOS integrated circuits; MOSFET; elemental semiconductors; integrated circuit modelling; nanotechnology; power consumption; semiconductor device models; silicon; silicon-on-insulator; 10 nm; CMOS circuits; SOI MOSFETs; Si-SiO/sub 2/; ballistic electron transport; crossover; drift-diffusion transport; dynamic power; gate length; minimum total power; nanoscale SOI ballistic MOSFETs; static power; CMOS technology; Clocks; Current density; Electrons; Energy management; Joining processes; Logic circuits; MOSFET circuits; Semiconductor device modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2001 IEEE International
Conference_Location
Durango, CO, USA
ISSN
1078-621X
Print_ISBN
0-7803-6739-1
Type
conf
DOI
10.1109/SOIC.2001.958031
Filename
958031
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