Preparation and properties of p-type semi-transparent conductive nickel oxide films

The NiO films were sputtered by radio frequency (rf) reactive magnetron sputtering with different O₂ partial pressure. The electric resistivity (¿) of NiO films continuously decreases from 0.45 to 0.01 ¿-cm as the O₂ partial pressure is increased from 10 to 100%. On the other hand, the transmittance also decreases continuously from 96.33% to 32.93% as the O₂ partial pressure increases from 0 to 100%. The lattice parameter of NiO films increases with increasing the O₂ partial pressures, but the crystallization of the films decreases significantly.