DocumentCode :
1670997
Title :
Synthesis and characterization of self-assemble ZnO nano-film and its influence on anti-light discoloration properties of bamboo
Author :
Wu, Yiqiang ; Qing, Yan ; Song, Ye ; Yu, Yan
fYear :
2010
Firstpage :
1039
Lastpage :
1040
Abstract :
ZnO nanostructured thin films formation in situ on the surface of bamboo via a low temperature aqueous solution route is studied. The effects of immersion time in seed solution, growth solution concentration, growth time, and pH of seed solution on ZnO morphology are also discussed. Field emission scanning electron microscopy is used to examine the surface morphology of the samples and X-ray powder diffraction is used to detect crystal structure and crystallinity. Results reveal that: prolonging the immersion time, the morphology of the films transforms from grain-net-line-cylinder-to-hexahedron; increasing the growth solution concentration, the compactness of surface films is enhanced as well as there is an enlargement on the size of the line, hexadron, cylinder; and self-assembled ZnO films is a promising material for bamboo protection, and prevents wood material from discoloration, degradation, and ageing when exposed to sunlight.
Keywords :
II-VI semiconductors; X-ray diffraction; crystal structure; nanostructured materials; scanning electron microscopy; self-assembly; semiconductor thin films; surface morphology; wide band gap semiconductors; zinc compounds; X-ray powder diffraction; ZnO; antilight discoloration; aqueous solution; bamboo; bamboo protection; bamboo surface; crystal structure; crystallinity; field emission scanning electron microscopy; growth solution concentration; growth time; immersion time; nanostructured thin films formation; seed solution pH; self-assembled nanofilm; surface films; surface morphology; Crystallization; Electron emission; Powders; Scanning electron microscopy; Self-assembly; Surface morphology; Temperature; Transistors; X-ray diffraction; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5425046
Filename :
5425046
Link To Document :
بازگشت