Synthesis and electrical properties of the metal-silicide nanostructures

Author

Yeh, P.H. ; Tsai, C.I.

Author_Institution

Dept. of Phys., Tamkang Univ., Tansui, Taiwan

fYear

2010

Firstpage

1041

Lastpage

1041

Abstract

Metal silicide nanostructures have been synthesized by spontaneous chemical vapor transport and reaction method. The temperature and the vapor flow rate were shown to critically influence the growth of nanostructures. Various phases and morphologies, such as single-stem nanowires, three-dimensional nanowires networks, and aloe-like nanowires have been synthesized. Very low turn-on field (1.42 V/Â¿m) and good conductance in field-emission and electrical property measurements indicates that metal-silicide nanowires is potentially useful.

Keywords

chemical reactions; electrical conductivity; nanowires; silicon compounds; Jk-SiO₂; aloe-like nanowires; electrical conductance; field emission; metal-silicide nanostructures; metal-silicide nanowires; reaction method; single-stem nanowires; spontaneous chemical vapor transport; three-dimensional nanowire networks; vapor flow rate; Chemicals; Electric variables measurement; Materials science and technology; Morphology; Nanostructures; Nanowires; Network synthesis; Physics; Silicides; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425047

Filename

5425047