DocumentCode
1671677
Title
Power Losses for IGCTs and Diodes in MV Three-level Inverters
Author
Liqiang, Yuan ; Zhengming, Zhao ; Zhi, Yang
Author_Institution
Dept. of Electrical Engineering, Tsinghua Univ., State Key Lab of Control and Simulation of Power System, Beijing, China, yuanlq99@mails.tsinghua.edu.cn
Volume
1
fYear
2006
Firstpage
205
Lastpage
208
Abstract
The power-loss models for different switching states of IGCTs and diodes in MV (medium voltage) three-level NPC (neutral point clamped) inverters are presented in this paper. The models, simulation implementation and the revisional experiments on IGCT test platform are described in details. The relation between the power losses and the other elements of the inverter is analyzed and discussed.
Keywords
IGCT; medium voltage; modeling and simulation; neutral point clamped; three-level; Circuits; Cooling; Diodes; Medium voltage; Power system modeling; Pulse width modulation; Pulse width modulation inverters; Snubbers; Switches; Variable speed drives; IGCT; medium voltage; modeling and simulation; neutral point clamped; three-level;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Drives Systems, 2005. PEDS 2005. International Conference on
Print_ISBN
0-7803-9296-5
Type
conf
DOI
10.1109/PEDS.2005.1619686
Filename
1619686
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