• DocumentCode
    1671920
  • Title

    Influence of nickel nanoparticle-substitution on dielectric properties of P(BN)ZT ceramics

  • Author

    Jaitanong, Nittaya ; Vittayakorn, Wanwilai C. ; Chaipanich, Arnon

  • Author_Institution
    Dept. of Phys. & Mater. Sci., Chiang Mai Univ., Chiang Mai, Thailand
  • fYear
    2010
  • Firstpage
    551
  • Lastpage
    552
  • Abstract
    In the present study, the effect of nickel nanoparticle doping on the dielectric properties of lead bismuth niobate zirconate titanate, P(BN)ZT solid solution were investigated. P(BN)ZT powder doped with nickel in the composition of (1-x) PBNZT-xNi when x = 0.00, 0.02, 0.04, 0.06, 0.08 and 0.1 percent by mole. P(BN)ZT doped with nickel powder were calcined at 900°C for 2 h and sintered at the temperature range of 1150-1250°C for 2 h with heating/cooling rate of 5°C/min. The dielectric constant ( ¿r) of all ceramics was measured at room temperature using LCR meter. The domain structure was observed by piezoresponse force microscopy (PFM). From the results, it can be seen that properties of P(BN)ZT ceramics with doped nickel nanoparticle change significantly with increasing nickel additive content in the system.
  • Keywords
    bismuth compounds; calcination; ceramics; doping; lead compounds; nanoparticles; nickel; niobium compounds; permittivity; powders; sintering; solid solutions; zirconium compounds; PbBiNbO3ZrO3TiO3:Ni; calcination; ceramics; dielectric constant; dielectric properties; lead bismuth niobate zirconate titanate; nickel nanoparticle doping; nickel nanoparticle substitution; nickel powder; piezoresponse force microscopy; sintering; solid solution; temperature 1150 degC to 1250 degC; temperature 293 K to 298 K; temperature 900 degC; time 2 h; Bismuth; Ceramics; Dielectrics; Doping; Nickel; Niobium compounds; Powders; Solids; Temperature measurement; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425081
  • Filename
    5425081