Influences of indium fluctuation to carrier transport and the current-voltage turn-on behavior in the InGaN quantum well LEDs

Author

Wu, Yuh-Renn ; Wang, Chang-Pei ; Wang, Kuang-Chung ; Speck, James S.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2012

Firstpage

1

Lastpage

2

Abstract

Most commercial c-plane InGaN quantum well (QW) LEDs show an early turn-on voltage, which is significantly lower than the value predicted by numerical simulation even with perfect contacts. To make a more realistic structure for simulations, nano-scale Indium fluctuations were included in the QWs. Simulations of current-voltage (I-V) characteristics using a 2D drift-diffusion solver showed much lower turn-on voltages than models with homogeneous layers and the calculated I-V agreed with experimental value, which may be due to the lateral fluctuations in the potential barrier due to indium fluctuation within the QWs.

Keywords

III-V semiconductors; fluctuations; gallium compounds; indium compounds; light emitting diodes; numerical analysis; quantum well devices; semiconductor device models; semiconductor quantum wells; wide band gap semiconductors; 2D drift-diffusion solver; InGaN; c-plane InGaN quantum well LED; carrier transport; current-voltage characteristics simulations; current-voltage turn-on behavior; homogeneous layers; lateral fluctuations; nanoscale indium fluctuations; numerical simulation; potential barrier; Electric potential; Fluctuations; Indium; Light emitting diodes; Materials; Numerical models; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2012 Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-4673-1839-6

Type

conf

Filename

6326366