Title :
Novel preparation of nanoporous SnO2 with high potocatalytic activity by a photochemical method
Author :
Wang, Hongjuan ; Sun, Fengqiang ; Zhang, Yu ; Wu, Qingsong ; Li, Jianpeng
Author_Institution :
Sch. of Chem. & Environ., South China Normal Univ., Guangzhou, China
Abstract :
Nanoporous SnO2 with high photocatalytic activity has been successfully prepared by a photochemical method. The as-synthesized sample was characterized by XRD, N2 adsorption-desorption, TEM, UV/vis and FTIR. The photocatalytic activity of the sample was evaluated by the decomposition of methyl orange(MO) aqueous solution under different light source(UV, sunlight and visible light) and was compared with that of the commercial titania (Degussa P25). The results showed that the SnO2 possessed of porous structures with high surface area and some hydroxyl groups. It had higher photocatalytic activity in photodegradation of MO than P25 under any light source, especially at the visibe light irradiation, which could be ascribed to the wide UV-vis light absorption rage between 200 nm and 516 nm and higher specific surface area. This method is low-cost, simple, and importantly, it supplies a new effect way to prepare SnO2 directly used as photocatalyst.
Keywords :
Fourier transform spectra; adsorption; catalysis; desorption; infrared spectra; nanofabrication; nanoporous materials; nitrogen; photochemistry; porosity; porous semiconductors; semiconductor growth; tin compounds; ultraviolet spectra; visible spectra; FTIR spectra; N2 adsorption-desorption; SnO2; TEM; UV-vis light absorption spectra; XRD; decomposition; methyl orange aqueous solution; nanoporous SnO2; photocatalytic activity; photochemical method; photodegradation; porous structures; wavelength 200 nm to 516 nm; Absorption; Chemistry; Diffraction; Lamps; Light sources; Nanoporous materials; Photochemistry; Sun; Tin; X-ray scattering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425095