DocumentCode
1672335
Title
Growth mechanism of β-FeSi2 by reactive deposition epitaxy
Author
Wang, Lianwei ; Lin, Chenglu ; Shen, Qinwo ; Ni, Rushan ; Chen, Xiangdong ; Zou, Shichang ; Ostling, Mikael
Author_Institution
Inst. of Metall., Acad. Sinica, Shanghai, China
fYear
1995
Firstpage
230
Lastpage
232
Abstract
The growth mechanism of a semiconducting β-FeSi2 film has been investigated by in situ reflective high energy electron diffraction observation combined with ex situ AES depth profile and cross-section transmission electron microscopy. At the initial stage, a metastable cubic γ-FeSi2 phase has been detected on both Si(100) and (111) wafers. A multilayer structure Fe-rich silicide FeSi1+x/Si has been revealed. During the deposition, β-FeSi2 only directly formed on the top layer at high temperature
Keywords
Auger effect; iron compounds; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; surface structure; transmission electron microscopy; vapour phase epitaxial growth; β-FeSi2; AES; FeSi2; RHEED; Si; Si(100); Si(111); TEM; cross-section transmission electron microscopy; ex situ AES depth profile; growth mechanism; high temperature; in situ reflective high energy electron diffraction; metastable cubic γ-FeSi2 phase; multilayer structure Fe-rich silicide; reactive deposition epitaxy; semiconducting β-FeSi2 film; Diffraction; Gamma ray detection; Gamma ray detectors; Metastasis; Nonhomogeneous media; Optical films; Phase detection; Semiconductivity; Semiconductor films; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500073
Filename
500073
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