Wafer bonding: an overview

Author

Gösele, Ulrich M. ; Reiche, M. ; Tong, Q.-Y.

Author_Institution

Max-Planck-Inst. of Microstructure Phys., Halle, Germany

fYear

1995

Firstpage

243

Lastpage

247

Abstract

Wafer bonding started as a specific way to fabricate inexpensive thick (>1 μm) film silicon-on-insulator (SOI) materials of high quality. In the meantime, also ultrathin SOI layers can be produced by wafer bonding and proper thinning techniques. In addition, silicon wafer bonding has shown to be a versatile technique for fabricating sensors and actuators. Especially in this area it is desirable to perform bonding at a temperature as low as possible. Wafer bonding may also be used to produce combinations of materials which may differ in terms of structure, crystallinity or lattice constant. The last feature allows the fabrication of III-V compound combinations which are not lattice matched and may be used for vertical cavity surface emitting lasers

Keywords

III-V semiconductors; reviews; silicon; silicon-on-insulator; wafer bonding; III-V compounds; SOI materials; actuators; fabrication; sensors; silicon; thinning; vertical cavity surface emitting lasers; wafer bonding; Actuators; Crystalline materials; III-V semiconductor materials; Lattices; Optical materials; Semiconductor films; Silicon on insulator technology; Temperature sensors; Vertical cavity surface emitting lasers; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.500076

Filename

500076