Title :
Investigation of Ti, Co and Fe silicides on SIMOX materials
Author :
Lin, Chenglu ; Wang, Lianwai ; Zhu, Shiyang ; Liu, Ping ; Hemment, P.L.F. ; Zou, Shichang
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
The fabrication of Ti, Co and Fe silicides on SIMOX materials has been investigated. These multilayer structures have been synthesized by different methods respectively. The physical properties and microstructure have been investigated. The experimental results show that TiSi2 with a low sheet resistance of 4.5Ω/□, can be formed on the thin film SIMOX. An epitaxial CoSi2 film has been obtained on SIMOX by a solid phase reaction of Co/Ti with Si overlayer of SIMOX. Semiconducting β-FeSi 2 film has been synthesized on SIMOX by solid phase epitaxy
Keywords :
SIMOX; cobalt compounds; iron compounds; solid phase epitaxial growth; titanium compounds; CoSi2; FeSi2; Si-SiO2; TiSi2; epitaxial CoSi2 film; fabrication; microstructure; multilayer structures; semiconducting β-FeSi2 film; sheet resistance; silicides; solid phase epitaxy; solid phase reaction; thin film SIMOX; Fabrication; Iron; Microstructure; Nonhomogeneous media; Semiconductivity; Semiconductor films; Semiconductor thin films; Sheet materials; Silicides; Solids;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500077
