Annealing Treatment Influence on Photoluminescence of the n-GaN Blue LED after a Dry Etching Process

Author

Shen-Li Chen ; Chin Chai Chen

Author_Institution

Dept. of of Electron. Eng., Nat. United Univ., Miaoli, Taiwan

fYear

2014

fDate

10-12 June 2014

Firstpage

203

Lastpage

206

Abstract

The annealing treatment was investigated in this paper in order to recover the surface damage caused by ion bombardment in a plasma etching process. At the beginning, the n-GaN samples were being heated and annealed in an N2 ambient which would result in influencing the electric and photonic characteristics. Eventually, it shows that the resistance has been improved after an annealing treatment especially at 550 ? situation. Meanwhile, photoluminescence (PL) measurements illustrate the same results of these n-GaN samples, which is increased > 200% than that of a non-annealing treatment group. However, the annealing treatment can´t completely repair the luminescence intensity due to the point defects from the DUT surface.

Keywords

III-V semiconductors; annealing; electric resistance; gallium compounds; light emitting diodes; photoluminescence; plasma materials processing; point defects; sputter etching; wide band gap semiconductors; GaN; annealing treatment; dry etching process; electric characteristics; ion bombardment; luminescence intensity; n-GaN blue LED; photoluminescence measurements; photonic characteristics; plasma etching process; point defects; resistance; surface damage; Annealing; Dry etching; Gallium nitride; Luminescence; Physics; Plasmas; Annealing; Inductively coupled plasma (ICP); Metal-organic-chemical-vapor deposition (MOCVD); Photoluminescence (PL);

fLanguage

English

Publisher

ieee

Conference_Titel

Computer, Consumer and Control (IS3C), 2014 International Symposium on

Conference_Location

Taichung

Type

conf

DOI

10.1109/IS3C.2014.63

Filename

6845495