Title :
A GIDL-Current Model for Advanced MOSFET Technologies Implemented into HiSIM2
Author :
Inagaki, Ryosuke ; Miura-Mattausch, Mitiko ; Inoue, Yasuaki
Author_Institution :
Waseda Univ., Fukuoka
Abstract :
A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs has been proposed and implemented into HiSIM2, first complete surface potential based model. The model consists of one tunneling mechanism considering two tunneling currents, band to band tunneling (BTBT) and trap assisted tunneling (TAT), and requires totally 7 model parameters covering all bias conditions. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning. Validity of the model has been tested with a circuit, which is sensitive to the change of the stored charge due to tunneling current.
Keywords :
MOSFET; leakage currents; tunnelling; GIDL-current model; HiSIM2; advanced MOSFET technologies; band to band tunneling; gate induced drain leakage current; surface potential; trap assisted tunneling; tunneling mechanism; Circuit simulation; Circuit testing; Current measurement; DC generators; Electronic mail; MOSFET circuits; Size measurement; Spontaneous emission; Threshold voltage; Tunneling;
Conference_Titel :
Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on
Conference_Location :
Kokura
Print_ISBN :
978-1-4244-1473-4
DOI :
10.1109/ICCCAS.2007.4348228
