Title :
Effects of precursor concentration on ZnO nanorods grown on flexible PET substrate by hydrothermal synthesis
Author :
Shin, C.M. ; Lee, J.Y. ; Heo, J.H. ; Lee, T.M. ; Park, J.H. ; Ryu, H.
Author_Institution :
Dept. of Nano Syst. Eng., Inje Univ., Gimhae, South Korea
Abstract :
In this study, the effects of precursor concentration on the zinc oxide (ZnO) nanorods grown on flexible polyethylen terephthalate (PET) substrate with and without buffer layer were discussed. The concentration was varied from 0.05 to 0.5M. When we inserted buffer layer before hydrothermally growth of ZnO, better aligned ZnO nanorods were grown. At relatively middle concentration (from 0.2 to 0.3M), well-aligned ZnO nanorods were grown on PET substrate with and without buffer layer. The crystal structural properties and surface morphologies were examined by x-ray diffraction (XRD), and field emission scanning electron microscope (FE-SEM), respectively.
Keywords :
II-VI semiconductors; X-ray diffraction; buffer layers; crystal structure; field emission electron microscopy; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor growth; surface morphology; wide band gap semiconductors; zinc compounds; X-ray diffraction; ZnO; buffer layer; crystal structural properties; field emission scanning electron microscope; flexible PET substrate; flexible polyethylene terephthalate substrate; hydrothermal synthesis; nanorods; surface morphologies; Positron emission tomography; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425112
