Title :
Carbon-assisted growth technology for ZnO nanowires
Author :
Cheng, C. ; Wong, T.L. ; Li, W. ; Yu, D.P. ; Wang, N.
Author_Institution :
Dept. of Phys. & the Inst. of Nano Sci. & Technol., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
Using thermal evaporation of ZnO at high temperature in vacuum, we fabricated ZnO nanowires (NWs) directly on carbon-based materials (amorphous carbon and photoresist). SEM observations showed that ZnO NWs preferentially nucleate on carbon and grew perpendicularly to the surface of the carbon-based materials. Based on this new developed carbon-assisted growth technology, we realized large-area and patterned growth of high-quality ZnO NWs with low cost.
Keywords :
II-VI semiconductors; evaporation; nanofabrication; nanowires; scanning electron microscopy; semiconductor growth; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; SEM; ZnO; amorphous carbon; carbon-assisted growth technology; nanowires; photoresist; thermal evaporation; Amorphous materials; Lattices; Nanowires; Optoelectronic and photonic sensors; Resists; Scanning electron microscopy; Spectroscopy; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425120
