Title :
A computer-aided GTO model for power electronic circuit design
Author :
Fischl, R. ; Tsay, C.L. ; Pourrezaei, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA
Abstract :
A model is presented of the gate-turn-off thyristor (GTO), which can be matched to measured data and incorporated in the SPICE computer-aided-analysis program. The model consists of a circuit containing two transistors and three resistors, which is the circuit configuration need to simulate the S-type negative-differential-resistance (NDR) I-V characteristics of the GTO. The authors give a method for selecting the resistors and transistor parameter in order to achieve a specified forward breakover voltage, holding current, and turn-off gain. Examples of the SPICE-generated static and dynamic performance are given
Keywords :
circuit CAD; circuit analysis computing; semiconductor device models; thyristors; GTO model; GTO thyristor model; I-V characteristics; S-type negative-differential-resistance; SPICE computer-aided-analysis program; circuit containing two transistors; dynamic performance; forward breakover voltage; gate-turn-off thyristor; holding current; power electronic circuit design; turn-off gain; Anodes; Circuit simulation; Circuit synthesis; Computational modeling; Diodes; Pulse width modulation converters; Resistors; SPICE; Thyristors; Voltage;
Conference_Titel :
Circuits and Systems, 1989., IEEE International Symposium on
Conference_Location :
Portland, OR
DOI :
10.1109/ISCAS.1989.100724