Title :
Optimization of silicon-on-insulator rib waveguide geometry for maximum continuous wave Raman gain
Author :
Wenting Hong ; Wang, S.H.
Author_Institution :
Dept. of Microelectron., Fuzhou Univ., Fuzhou, China
Abstract :
We numerically investigated the relationship between the transverse waveguide geometry and the continuous wave Raman gain in SOI rib waveguide Raman amplifiers. By optimizing the transverse geometric size, a Raman gain enhancement can be achieved in silicon rib waveguides with small effective carrier lifetime.
Keywords :
carrier lifetime; elemental semiconductors; optical waveguides; rib waveguides; silicon; silicon-on-insulator; Raman gain enhancement; effective carrier lifetime; maximum continuous wave Raman gain; optimization; rib waveguide geometry; silicon-on-insulator; transverse geometric size; Raman Amplification; Silicon photonics; Two photon absorption;
Conference_Titel :
Optical Communications and Networks (ICOCN), 2012 11th International Conference on
Conference_Location :
Chonburi
Print_ISBN :
978-1-4673-4957-4
Electronic_ISBN :
978-1-4673-4958-1
DOI :
10.1109/ICOCN.2012.6486223
