• DocumentCode
    1673569
  • Title

    Low-power embedded SRAM modules with expanded margins for writing

  • Author

    Yamaoka, Masanao ; Maeda, Noriaki ; Shinozaki, Yoshihiro ; Shimazaki, Yasuhisa ; Nii, Koji ; Shimada, Shigeru ; Yanagisawa, Kazumasa ; Kawahara, Takayuki

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • fYear
    2005
  • Firstpage
    480
  • Abstract
    A low-power embedded SRAM module implements a writing margin expansion for low-voltage operation, a write replica circuit for low-power operation and a low-leakage structure. The replica circuit reduces active power by 18%, and a 512kB module operates at 450MHz, has 7.8 μA leakage in standby, and a minimum VDD of 0.8V.
  • Keywords
    SRAM chips; low-power electronics; 0.8 V; 450 MHz; 512 kB; 7.8 muA; embedded SRAM module; low-leakage structure; low-power SRAM module; low-voltage operation; write replica circuit; writing margin expansion; Batteries; Circuits; Leakage current; MOS devices; Manufacturing processes; Random access memory; Timing; Ultra large scale integration; Voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8904-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2005.1494078
  • Filename
    1494078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1673569