DocumentCode :
1673696
Title :
A high-power-handling GSM switch IC with new adaptive-control-voltage-generator circuit scheme
Author :
Numata, Keiichi ; Takahashi, Yuji ; Maeda, Tadashi ; Hida, Hikaru
Author_Institution :
Photonic & Wireless Device Res. Labs., NEC Corp., Ibaraki, Japan
fYear :
2003
Firstpage :
233
Lastpage :
236
Abstract :
We propose a high-power-handling switch circuit using a new adaptive-control-voltage-generator circuit (AVG). This AVG enables the internal control node voltages to be automatically increased in high-input-power conditions. This switch circuit results in high-power-handling, low-insertion-loss, small chip size and low voltage control. The developed IC demonstrated a handling power of 36.5 dBm and an insertion loss of 0.31 dB with 40% chip size reduction.
Keywords :
adaptive control; cellular radio; power integrated circuits; power semiconductor switches; radiofrequency integrated circuits; signal generators; voltage control; 0.31 dB; adaptive-control-voltage-generator circuit; high-power-handling GSM switch IC; insertion loss; Communication switching; FETs; GSM; Insertion loss; Photonic integrated circuits; Size control; Switches; Switching circuits; Voltage control; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN :
1529-2517
Print_ISBN :
0-7803-7694-3
Type :
conf
DOI :
10.1109/RFIC.2003.1213933
Filename :
1213933
Link To Document :
بازگشت