• DocumentCode
    1674022
  • Title

    Piezoelectric evaluation of UV-illuminated PZT films by piezorsponse force microscopy

  • Author

    Hong, Cin-Guan ; Hsu, Ching-Pin ; Yang, Cheng-Fu ; Leu, Ching-Chich

  • Author_Institution
    Dept. of Chem. & Mater. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
  • fYear
    2010
  • Firstpage
    576
  • Lastpage
    577
  • Abstract
    The Pb(Zr0.6,Ti0.4)O3 (PZT) films were prepared using a sol-gel process on top of Pt (150nm)/TiO2(20nm)/SiO2/Si. Deposited solution layers were exposed to ultraviolet light illumination during the baking process. Then, we used the piezoresponse force microscopy (PFM) to perform the nanoscale observation of ferroelectric domain structure in PZT films.
  • Keywords
    electric domains; ferroelectric thin films; lead compounds; liquid phase deposition; piezoelectric thin films; scanning probe microscopy; sol-gel processing; ultraviolet radiation effects; PFM; PZT; Pb(Zr0.6Ti0.4)O3 films; Pt-TiO2-SiO2-Si; Si; baking process; ferroelectric domain structure; piezoelectric evaluation; piezoresponse force microscopy; size 150 nm; size 20 nm; sol-gel process; ultraviolet light illumination; Capacitors; Chemical elements; Ferroelectric films; Ferroelectric materials; Lighting; Microscopy; Optical films; Piezoelectric films; Semiconductor films; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5425159
  • Filename
    5425159
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1674022