DocumentCode
1674467
Title
A 94 GHz-band low noise downconverter
Author
Yoshinaga, Hiroyuki ; Masuda, Kohji ; Takagi, S. ; Abe, B. ; Shibata, K. ; Kawasaki, H. ; Tokuda, H. ; Tokaji, I.
Author_Institution
Toshiba Corp., Tokyo, Japan
fYear
1993
Firstpage
779
Abstract
A 94-GHz-band low-noise downconverter has been developed by combining an InP-HEMT (high-electron-mobility transistor) low-noise amplifier, a pseudomorphic HEMT mixer, and a dielectric resonator oscillator, each fabricated using the planar circuit technology. The downconverter shows a noise figure of less than 4.9 dB and a conversion gain of greater than 11 dB.<>
Keywords
III-V semiconductors; MMIC; field effect integrated circuits; frequency convertors; high electron mobility transistors; indium compounds; 94 GHz; InP; conversion gain; dielectric resonator oscillator; low noise downconverter; low-noise amplifier; noise figure; planar circuit technology; pseudomorphic HEMT mixer; Circuit noise; Dielectrics; Gain; HEMTs; Indium gallium arsenide; Low-noise amplifiers; Noise figure; Oscillators; PHEMTs; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1209-0
Type
conf
DOI
10.1109/MWSYM.1993.276758
Filename
276758
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