DocumentCode
1674698
Title
The study of light doped chromium SI-GaAs single crystal in the LEC technology
Author
Jinliang Yuan ; Qi, Dege ; Lai, Zhanping ; Niu, Shenjun ; Du, Gengna ; Liu, Yanfeng
Author_Institution
46th Res. Inst., Minist. of Electron. Ind., Tianjin, China
fYear
1995
Firstpage
402
Lastpage
404
Abstract
In this paper, a special technique using light doped or super-light doped (LDC or SLDC) chromium is reported with a LEC system. It is able to obtain repeatedly SI-GaAs crystals of high resistivity and mobility, and to decrease resistivity inhomogeneities substantially. A new model of the compensation mechanism for LDC and SLDC is established
Keywords
III-V semiconductors; carrier mobility; charge compensation; chromium; crystal growth from melt; electrical resistivity; gallium arsenide; semiconductor doping; semiconductor growth; GaAs:Cr; LEC technology; compensation mechanism; high mobility; high resistivity; light doped SI-GaAs:Cr single crystals; resistivity inhomogeneities; super-light doping; Chromium; Conductivity; Crystalline materials; Electronics industry; Gallium arsenide; Impurities; Lighting; Microwave devices; Microwave integrated circuits; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500178
Filename
500178
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