Title :
Memory technologies in the nano-era: challenges and opportunities
Author :
Kim, Kinam ; Jeong, Gitae
Abstract :
As we move into the nano-era, there are growing concerns about the future of conventional memories due to their increasing technical complexity, fabrication cost, and scalability issues. In this paper, technical challenges and recent breakthroughs in conventional memories, and the future directions of memory development including new types of memories are introduced and discussed.
Keywords :
DRAM chips; SRAM chips; ferroelectric storage; flash memories; magnetic storage; nanoelectronics; DRAM; FRAM; Flash memory; MRAM; SRAM; ferroelectric RAM; magnetic RAM; memory development; nano-era memory technologies; scalability; CMOS technology; FinFETs; Flash memory; Hafnium oxide; Interference; Nonvolatile memory; Random access memory; Silicon; Space technology; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8904-2
DOI :
10.1109/ISSCC.2005.1494126
