Title :
Study of the longitudinal micro-distribution in the principal parameter properties of LEC SI-GaAs
Author :
He, Xiukun ; Ru, Qiongna ; Ding, Li ; Li, Guangping ; Guo, Xiaobing
Author_Institution :
Tianjin Electron. Mater. Res. Inst., China
Abstract :
The regularity of the longitudinal micro-distribution in parameters such as shallow acceptor carbon, deep donor EL2, resistivity and EPD was studied. The experimental results showed that for undoped LEC SI-GaAs crystal grown in an As rich [As/(As+Ga)=0.51] melt, C concentration and resistivity reduced from the seed-end to the tail-end. EL2 longitudinal distribution has three characteristic regions. EPD longitudinal distribution is a non-symmetrical “U” shape. The origin of these longitudinal distributions in SI-GaAs is discussed and a method to improve the homogeneity of SI-GaAs crystals is investigated
Keywords :
III-V semiconductors; crystal growth from melt; deep levels; dislocation density; electrical resistivity; gallium arsenide; impurity distribution; impurity states; semiconductor growth; As rich melt; C concentration; EPD; GaAs:C; LEC SI-GaAs; crystal homogeneity; deep donor EL2; longitudinal micro-distribution; nonsymmetrical U shape; resistivity; shallow acceptor C; Apertures; Conductivity; Crystalline materials; Gallium arsenide; Helium; Integrated circuit technology; Mechanical variables measurement; Microwave devices; Microwave technology; Thickness measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500179
