A sheet-type scanner based on a 3D stacked organic-transistor circuit with double word-line and double bit-line structure

Author

Kawaguchi, Hiroshi ; Iba, Shingo ; Kato, Yusaku ; Sekitani, Tsuyoshi ; Someya, Takao ; Sakurai, Takayasu

Author_Institution

Univ. of Tokyo, Japan

fYear

2005

Firstpage

580

Abstract

Double word-line and bit-line structure in an organic FET-based sheet-type scanner is described. This structure reduces the line delay by a factor of 5, and the power by a factor of 7. To realize the structure in a pixel array, 3D stacked organic FETs are manufactured. The active leakage is reduced by a dynamic serially connected decoder.

Keywords

field effect transistor circuits; image scanners; optical scanners; organic semiconductors; photodiodes; 3D stacked organic-transistor circuit; OFET sheets; active leakage reduction; double bit-line structure; double word-line structure; dynamic serially connected decoder; line delay reduction; organic field-effect transistors; organic photodiodes; pixel array; sheet-type scanner; stacked organic FET; Cathodes; Circuits; Delay lines; Mechanical sensors; OFETs; Optical films; Optical sensors; Photodiodes; Semiconductor materials; Skin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

0-7803-8904-2

Type

conf

DOI

10.1109/ISSCC.2005.1494128

Filename

1494128

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1674763