Title :
Study of oxide field and electron energy dependence of interface-state generation in MOS structure by electron injection from Al gate and Si substrate
Author :
Yuan, X.-J. ; Marsland, J.S.
Author_Institution :
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
Abstract :
Interface-state generation in an MOS structure under internal photoemission (IPE) electron injection was studied. The investigation was focused on the applied oxide field and injected electron energy dependence of interface-state generation during IPE injection of electrons from both the Al gate and the Si substrate. An asymmetric polarity dependence of interface degradation was found by varying the oxide field and illuminating photon energy
Keywords :
MIS structures; aluminium; interface states; silicon; silicon compounds; Al gate; Al-SiO2-Si; MOS structure; Si; Si substrate; asymmetric polarity dependence; electron energy dependence; illuminating photon energy; interface degradation; interface-state generation; internal photoemission electron injection; oxide field dependence; Artificial intelligence; Capacitance-voltage characteristics; Charge carrier processes; Electrodes; Electrons; Hafnium; MOS capacitors; MOS devices; Photonic band gap; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.500182
