Title :
Effect of technology scaling on program and read window in phase change memories
Author :
Braga, Stefania ; Cabrini, Alessandro ; Torelli, Guido
Author_Institution :
Dept. of Electron., Univ. of Pavia, Pavia, Italy
Abstract :
This paper investigates the scaling perspective of PCM technology by analyzing the effects of the geometrical dimensions reduction and the read voltage scaling on the program and read operations. To this end, we derive an analytical expression to estimate the dependence of the RESET current and the read current on the key geometrical parameters of the memory cell, such as heater size and GST layer thickness.
Keywords :
phase change memories; GST layer thickness; RESET current; geometrical dimensions reduction; heater size; phase change memories; read current; read voltage scaling; technology scaling effect; Amorphous materials; Electric resistance; Nonvolatile memory; Phase change materials; Phase change memory; Resistance heating; Temperature; Thermal conductivity; Thermal resistance; Voltage;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5425189
