Title :
A 17-GHz direct down-conversion mixer in a 47-GHz SiGe process
Author :
Lynch, Michael W. ; Holdenried, Chris D. ; Haslett, James W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada
Abstract :
Future wireless data access will involve gigabit-per-second radios operating at RF frequencies above 10 GHz. This paper presents the design, simulation and measurement of a 17 GHz direct down-conversion mixer intended for these systems. The mixer was fabricated in a low-fT (47 GHz) SiGe process, achieving a midband conversion gain of 12 dB and a double sideband noise figure of 11.5 dB, while consuming 17.8 mW from a 3.3 V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; mixers (circuits); radiofrequency integrated circuits; semiconductor materials; 11.5 dB; 12 dB; 17 GHz; 17.8 mW; 3.3 V; 47 GHz; RFIC; SiGe; SiGe BiCMOS process; conversion gain; direct down-conversion mixer; double sideband noise figure; wireless data access; 1f noise; Admittance; Germanium silicon alloys; Integrated circuit noise; Mixers; Noise figure; Radio frequency; Silicon germanium; Transceivers; Transconductance;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
Print_ISBN :
0-7803-7694-3
DOI :
10.1109/RFIC.2003.1213985
