Title :
MCQW intensity optical modulator for InP based MMIC/photonics integrated circuits
Author :
Silva, M.T.C. ; Martinez, M.A.G. ; Herczfeld, P.R.
Author_Institution :
Drexel Univ., Philadelphia, PA, USA
Abstract :
Chip level integration of photonic devices and MMICs (monolithic microwave integrated circuits) are discussed. The focus is on an InP-based multicoupled quantum well (MCQW) intensity optical modulator. In the proposed configuration, the microwave field induces a periodic structure via the electrorefractive effect. The interaction of light with the induced grating yielding a modulated optical signal. The structure and expected performance of the device are discussed. Simulations reveal that a 270- mu m-long device, operating at -40 V, has a projected bandwidth of 14 GHz at a modulation depth of 0.5. The optical loss for this device length is only 0.24 dB.<>
Keywords :
III-V semiconductors; MMIC; electro-optical devices; indium compounds; integrated optoelectronics; optical losses; optical modulation; optical waveguides; refractive index; semiconductor quantum wells; -40 V; 0.24 dB; 14 GHz; 270 micron; InGaAsP-InP; MMIC/photonics integrated circuits; chip level integration; electrorefractive effect; induced grating; intensity optical modulator; microwave field; modulated optical signal; monolithic microwave integrated circuits; multicoupled quantum well; optical loss; periodic structure; Field effect MMICs; Indium phosphide; Integrated optics; Intensity modulation; Microwave devices; Microwave integrated circuits; Microwave photonics; Monolithic integrated circuits; Optical modulation; Photonic integrated circuits;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276836
