DocumentCode
1676907
Title
THz emission from a-plane InGaN
Author
Woodward, Nathaniel T. ; Metcalfe, G.D. ; Enck, R. ; Gallinat, C.S. ; Shen, H. ; Wraback, M.
Author_Institution
Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA
fYear
2012
Firstpage
1
Lastpage
2
Abstract
Terahertz emission from high stacking fault density a-plane InGaN utilizing in-plane drift fields is shown to produce considerable improvement over c-plane InGaN under identical excitation conditions.
Keywords
III-V semiconductors; excited states; gallium compounds; high-speed optical techniques; indium compounds; semiconductor epitaxial layers; stacking faults; terahertz wave spectra; wide band gap semiconductors; InGaN; THz emission; c-plane InGaN; high stacking fault density a-plane InGaN; identical excitation conditions; in-plane drift fields; semiconductor epitaxial layers; terahertz emission; Electric fields; Fiber lasers; Gallium nitride; Materials; Optical fiber amplifiers; Optical fiber polarization; Stacking;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326539
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