Title :
GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices
Author :
Meng, C.C. ; Fetterman, H.R. ; Streit, D.C. ; Block, T.R. ; Saito, Y.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
The first CW (continuous-wave) operation of GaAs/AlGaAs multiquantum-well IMPATT (impact ionization avalanche transit time) devices at 100 GHz has been achieved. Multiquantum wells were used to generate the avalanche injection current, since these structures improve the nonlinearity of the avalanche process and reduce the ionization rate saturation limitations. The operation and design principle, fabrication procedure, and experimental results for these devices are presented. A 6.4-mW CW power output was achieved at 100.3 GHz.<>
Keywords :
III-V semiconductors; IMPATT diodes; aluminium compounds; gallium arsenide; semiconductor quantum wells; 100 GHz; 6.4 mW; CW operation; CW power output; GaAs-AlGaAs; MQW IMPATT; avalanche injection current; high frequency IMPATT devices; ionization rate saturation limitations; multiquantum well structures; Acceleration; Charge carrier processes; Degradation; Fabrication; Frequency; Gallium arsenide; Impact ionization; Linearity; Photonic band gap; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1209-0
DOI :
10.1109/MWSYM.1993.276881
