180nm 4Mb High Speed High Reliability Embedded SONOS Flash Memory

Author

Pan, Liyang ; Wu, Dong ; Yang, Guangjun ; Sun, Lei ; Pang, Huiqing ; Zhu, Jun

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

fYear

2006

Firstpage

305

Lastpage

308

Abstract

A 1.8/3.3V 4Mb (512K times 8 bit) embedded SONOS flash memory has been successfully developed and verified with 180nm CMOS logic compatible integrated technology, in which a reverse programming array architecture and a novel high speed sensing circuit with dual-phase precharge path and self-adjusted load are proposed to improve read speed. Moreover, a novel threshold voltage tracking technique is also introduced to improve the reliability. Finally, a 4.4 mm² core size and a 0.40 mum² (12.4F²/bit) cell size are obtained, and the test results show that the read speed and the endurance characteristics are 17ns and 10⁵, respectively

Keywords

CMOS memory circuits; embedded systems; flash memories; high-speed integrated circuits; integrated circuit reliability; 1.8 V; 17 ns; 180 nm; 3.3 V; 4 Mbit; CMOS logic technology; dual-phase precharge path; embedded SONOS flash memory; endurance characteristics; high reliability flash memory; high speed flash memory; high speed sensing circuit; improved read speed; reverse programming array architecture; self-adjusted load; threshold voltage tracking; CMOS logic circuits; CMOS memory circuits; CMOS technology; Flash memory; Integrated circuit reliability; Integrated circuit technology; Logic arrays; Logic programming; Programmable logic arrays; SONOS devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2006. CICC '06. IEEE

Conference_Location

San Jose, CA

Print_ISBN

1-4244-0075-9

Electronic_ISBN

1-4244-0076-7

Type

conf

DOI

10.1109/CICC.2006.320888

Filename

4114965