A monolithic dielectrically stabilized voltage controlled oscillator for the millimeter wave range

Author

Guttich, U. ; Dieudonne, J.-M. ; Schmidt, L.-P.

Author_Institution

Deutsche Aerospace AG, Ulm, Germany

fYear

1993

Firstpage

667

Abstract

The design, fabrication, and evaluation of a monolithic 29-GHz dielectrically stabilized voltage-controlled oscillator (DVO) using a MESFET as the active device are described. The novel design yields an oscillator with excellent phase noise behavior and frequency tuning capabilities. A phase noise N/C/sub FM/ of -100 dBc/Hz at 100 kHz off carrier and an output power of+8 dBm without significant deviation over the full tuning range of 45 MHz are obtained. A frequency stability of -6 ppm/ degrees C is measured in the -20 degrees C to +80 degrees C temperature range for a+3 ppm/ degrees C temperature coefficient of the dielectric resonator. The MMIC (monolithic microwave integrated circuit) device is realized using a 0.25- mu m MESFET technology.<>

Keywords

MMIC; Schottky gate field effect transistors; dielectric resonators; field effect integrated circuits; frequency stability; microwave oscillators; tuning; variable-frequency oscillators; -20 to 80 degC; 0.25 micron; 29 GHz; EHf; MESFET technology; MMIC; SHF; VCO; dielectric resonator; dielectrically stabilized; frequency stability; frequency tuning capabilities; millimeter wave range; monolithic microwave integrated circuit; phase noise behavior; tuning range; voltage controlled oscillator; Dielectrics; Fabrication; Frequency; MESFET integrated circuits; MMICs; Millimeter wave technology; Phase noise; Temperature distribution; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276995

Filename

276995