Digital Signal Processing for RF at 45-nm CMOS and Beyond

Author

Staszewski, Robert Bogdan ; Muhammad, Khurram ; Leipold, Dirk

Author_Institution

Texas Instruments, Dallas, TX

fYear

2006

Firstpage

517

Lastpage

522

Abstract

Having gained experience in developing the first ever all-digital transmitter and digitally-intensive receiver for mobile phones in 90-nm CMOS, the authors offering in this paper are view into the future of highly integrated RF circuits. First experimental designs in 45-nm CMOS reveal highly unfriendly environment for analog and RF circuits design. The radio architecture to be successful must further transform the conventional voltage domain into high-speed and high-precision operation of predominantly digital circuitry

Keywords

CMOS integrated circuits; analogue integrated circuits; integrated circuit design; mobile handsets; nanoelectronics; radiofrequency integrated circuits; receivers; signal processing; transmitters; 45 nm; CMOS technology; RF integrated circuits; all-digital transmitter; analog circuits design; digital signal processing; digitally-intensive receiver; mobile phones; radio architecture; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS process; Circuit synthesis; Design for experiments; Digital signal processing; Mobile handsets; Radio frequency; Radio transmitters; Receivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2006. CICC '06. IEEE

Conference_Location

San Jose, CA

Print_ISBN

1-4244-0075-9

Electronic_ISBN

1-4244-0076-7

Type

conf

DOI

10.1109/CICC.2006.320904

Filename

4115013