DocumentCode
1680353
Title
Time domain analysis of via holes and shorting pins in microstrip using 3-D SCN TLM
Author
Eswarappa, C. ; Hoefer, W.J.R.
Author_Institution
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
fYear
1993
Firstpage
917
Abstract
The scattering parameters of microstrip via holes and shorting pins are computed using the 3-D SCN (symmetrical condensed node) TLM (transmission line matrix) method. The results agree well with the available data at low frequencies, thus demonstrating that the TLM method is a powerful tool applicable in the analysis of monolithic microwave integrated circuits of high-density and high-speed digital microwave circuits.<>
Keywords
MMIC; S-parameters; digital integrated circuits; microstrip components; time-domain analysis; transmission line theory; 3D TLM; digital microwave circuits; high-speed; microstrip; monolithic microwave integrated circuits; scattering parameters; shorting pins; symmetrical condensed node; transmission line matrix; via holes; Distributed parameter circuits; Frequency; Microstrip; Microwave theory and techniques; Pins; Power transmission lines; Scattering parameters; Symmetric matrices; Time domain analysis; Transmission line matrix methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1209-0
Type
conf
DOI
10.1109/MWSYM.1993.277036
Filename
277036
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