Influence of Working Pressure on Structural and Optoelectronic Properties of Al-Doped ZnO Thin Films

Author

Chien Hsun Chu ; Hung Wei Wu ; Jow Lay Huang

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2014

fDate

10-12 June 2014

Firstpage

569

Lastpage

572

Abstract

In this study, we investigated the electrical, optical and structural properties of aluminum-doped ZnO (AZO) thin films by RF magnetron sputtering under different working pressure of 5 - 40 mTorr. Optimization of the prepared thin films shows low resistivity of 6.11 × 10^-4 Ω-cm, mobility of 4.295 cm²/V-s and carrier concentration of 3.277 × 1020 cm^-3 at working pressure of 5 mTorr. The maximum transmittance of 98.99 % for wavelengths above 600 nm and Haacke figure of merit (FOM) are 6.44 × 10^-3 Ω^-1 with working pressure of 5 mTorr. These results indicate that AZO thin films are a promising high conductivity transparent electrode scheme for solar cells and various displays applications.

Keywords

II-VI semiconductors; aluminium; carrier density; semiconductor doping; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; AZO thin films; Al; Haacke figure of merit; RF magnetron sputtering; ZnO; carrier concentration; electrical properties; high conductivity transparent electrode scheme; optical properties; optoelectronic properties; solar cells; structural properties; working pressure; Conductivity; Magnetic films; Optical films; Photonic band gap; Sputtering; Zinc oxide; AZO; Aluminum-doped zinc oxide; RF magnetron sputtering; thin film; transparent conductive oxides;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer, Consumer and Control (IS3C), 2014 International Symposium on

Conference_Location

Taichung

Type

conf

DOI

10.1109/IS3C.2014.155

Filename

6845947