DocumentCode
1680955
Title
Compact modeling of noise in CMOS
Author
Scholten, A.J. ; van Langevelde, R. ; Tiemeijer, L.F. ; Klaassen, D.B.M.
Author_Institution
Philips Res. Eur., Eindhoven
fYear
2006
Firstpage
711
Lastpage
716
Abstract
The physical background of the thermal noise equations of the PSP MOSFET model is presented. The PSP thermal noise model is shown to pass a number of proposed benchmark tests for MOSFET thermal noise. Without any fitting parameters, it is shown to predict with great accuracy a collection of experimental data on three modern CMOS technologies. The impact of device layout on noise properties is discussed and demonstrated experimentally
Keywords
CMOS integrated circuits; MOSFET; thermal noise; CMOS technologies; PSP MOSFET model; compact noise modeling; thermal noise equations; 1f noise; Benchmark testing; CMOS technology; Circuit noise; Equations; MOSFET circuits; Semiconductor device modeling; Temperature; Transfer functions; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location
San Jose, CA
Print_ISBN
1-4244-0075-9
Electronic_ISBN
1-4244-0076-7
Type
conf
DOI
10.1109/CICC.2006.320898
Filename
4115053
Link To Document