DocumentCode :
1681362
Title :
Efficient silicon-on-insulator polarization rotator based on mode evolution
Author :
Wirth, Justin C. ; Wang, Jian ; Niu, Ben ; Xuan, Yi ; Fan, Li ; Varghese, Leo T. ; Leaird, Daniel E. ; Qi, Minghao ; Weiner, Andrew M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
A compact and high extinction SOI polarization rotator is fabricated and characterized. For TM to TE rotation, a device 37.5 μm in length is demonstrated to have a polarization extinction ratio between 17.8-26 dB from 1525 nm to 1570 nm.
Keywords :
integrated optics; light polarisation; optical fabrication; optical rotation; silicon-on-insulator; SOI polarization rotator; Si; TE rotation; TM rotation; polarization extinction ratio; silicon-on-insulator polarization rotator; wavelength 1525 nm to 1570 nm; wavelength 37.5 mum; Extinction ratio; Optical fiber amplifiers; Optical fiber devices; Optical fiber polarization; Photonics; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6326712
Link To Document :
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