Title :
A SP9T cellular antenna switch in 2.5 V CMOS thin-film SOI
Author :
Blaschke, V. ; Unikovski, A. ; Hurwitz, P. ; Chaudhry, S.
Author_Institution :
TowerJazz, Newport Beach, CA, USA
Abstract :
This paper presents the results of a compact wire-bond SP9T antenna switch that was designed as technology demonstrator for a 2.5 V CMOS, 250 fs Ron-Coff thin-film SOI process. Through “layout-driven” circuit design, a small die size of 1.52 mm2 was achieved for a fully integrated switch die containing RF-section, I/O pads, ESD, decoder, level shifters and dual frequency charge pump to generate negative vss. The dual frequency charge pump was a requirement to achieve a fast start-up time of 10 μs and switch rise times of 3 μs. A low insertion loss of 0.42 dB for cellular low-band at 915 MHz and 0.55 dB for cellular high-band at 1910 MHz, harmonic powers better -76 dBc over battery and Band I/V IMD3 of -110 dBm were achieved. All ports show a high ESD tolerance of 2 kV HBM.
Keywords :
CMOS analogue integrated circuits; antennas; cellular radio; charge pump circuits; electrostatic discharge; silicon-on-insulator; thin films; CMOS thin-film SOI; Ron-Coff thin-film SOI process; SP9T cellular antenna; frequency 1910 MHz; frequency 915 MHz; gain 0.55 dB; high ESD tolerance; layout-driven circuit design; loss 0.42 dB; time 10 mus; time 250 fs; time 3 mus; voltage 2 kV; voltage 2.5 V; Batteries; Charge pumps; Electrostatic discharges; Harmonic analysis; Insertion loss; Switches; Switching circuits; RF CMOS; SOI; cellular antenna switch; charge pump; front-end module; harmonics; insertion loss;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2013 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-2929-3
Electronic_ISBN :
2164-2958
DOI :
10.1109/RWS.2013.6486702