Title :
Transient Signal Distortion in Silicon-Based Interconnects over Thin-Film Metal Ground Layers
Author :
Zhang, L. ; Song, J.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA
Abstract :
This paper studies the effect of the embedded thin-film metallization layer, normally designed as ground plane, on the transient characteristics of pulse propagation in silicon-based multilayer interconnects. The spectral domain approach (SDA) and FFT are used to analyze an on-chip thin-film microstrip line (TFMSL) structure. It is found that such thin-film metallization can excite the slow wave. And the thickness factor has great influences on the signal distortion
Keywords :
distortion; fast Fourier transforms; integrated circuit metallisation; microstrip lines; semiconductor device metallisation; thin films; FFT; embedded thin-film metallization layer; pulse propagation; silicon multilayer interconnects; spectral domain approach; thin-film metal ground layers; thin-film microstrip line structure; transient signal distortion; Distortion; Frequency; Integrated circuit interconnections; Metallization; Nonhomogeneous media; Power system transients; Semiconductor thin films; Substrates; Thin film circuits; Transistors;
Conference_Titel :
Electrical Performance of Electronic Packaging, 2006 IEEE
Conference_Location :
Scottsdale, AZ
Print_ISBN :
1-4244-0668-4
DOI :
10.1109/EPEP.2006.321213