• DocumentCode
    1689616
  • Title

    Monolithic Add-Drop Quantum Dot Switch Exhibiting Ultra-Low Cross-Wavelength Distortion

  • Author

    Hu, X. ; Liu, S. ; Chu, Y. ; Zhao, X. ; Thompson, M.G. ; Wonfor, A. ; Sellin, R.L. ; Penty, R.V. ; White, I.H. ; Kovsh, A.R.

  • Author_Institution
    Univ. of Cambridge, Cambridge
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A monolithic add-drop switch incorporating an InGaAs quantum-dot active layer is presented, and 10Gb/s dual wavelength operation is demonstrated. No impairment in device performance is observed as a result
  • Keywords
    III-V semiconductors; indium compounds; integrated optics; photonic switching systems; semiconductor quantum dots; InGaAs; InGaAs quantum-dot active layer; bit rate 10 Gbit/s; monolithic add-drop quantum dot switch; ultralow cross-wavelength distortion; Electrodes; Gallium arsenide; Interference; Mirrors; Noise figure; Optical amplifiers; Optical switches; Optical waveguides; Quantum dots; Semiconductor optical amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    1-55752-831-4
  • Type

    conf

  • DOI
    10.1109/OFC.2007.4348925
  • Filename
    4348925