Title :
Monte Carlo Simulation of Excess Noise in Heterojunction Avalanche Photodetector
Author :
Ghosh, A. ; Ghosh, K.K.
Author_Institution :
Centre for Sci. Educ. & Res., Calcutta
Abstract :
Avalanche photodetectors (APDs) are important optoelectronic devices used in the detection of very low optical signals in fibre-optic communication systems. The advantage of high gain mechanism through carrier multiplication in materials is exploited in designing the APDs. The use of random path length (RPL) model in the framework of Monte-Carlo (MC) method has proved to yield results in agreement with the observed experimental values.
Keywords :
III-V semiconductors; Monte Carlo methods; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; optical fibre communication; optical signal detection; photodetectors; semiconductor device noise; APD design; APD excess noise; InP-InGaAs; InP-InGaAs - Interface; Monte Carlo simulation; carrier multiplication; fibre-optic communication systems; gain mechanism; heterojunction avalanche photodetector; low optical signal detection; optoelectronic devices; photodiodes; random path length model; Electron optics; Heterojunctions; Indium gallium arsenide; Indium phosphide; Ionization; Kinetic theory; Optical noise; Optical saturation; Optical scattering; Photodetectors;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
Conference_Location :
Newark, DE
Print_ISBN :
978-1-4244-1431-4
DOI :
10.1109/NUSOD.2007.4349014
