DocumentCode :
1691753
Title :
Relaxation of current filament due to RFC technology and ballast resistor for robust FWD operation
Author :
Nishii, Akito ; Nakamura, Katsumi ; Masuoka, Fumihito ; Terashima, Tomohide
Author_Institution :
Power Device Works, Mitsubishi Electr. Corp., Fukuoka, Japan
fYear :
2011
Firstpage :
96
Lastpage :
99
Abstract :
We have investigated the destruction mechanism of High Voltage (HV) Free Wheeling Diodes (FWD) during a reverse recovery operation. The most possible mode of the destruction phenomena originate in local heating due to current filament at the edge portion of the active area. To achieve a large reverse recovery Safe Operation Area (SOA), we focus on the boundary region between the active area and the termination area. To enforce our Relaxed Field of Cathode (RFC) concept, it is more effective for the wider SOA to place a ballast resistance for avoiding the current from crowding around the anode region in the top surface of the diode.
Keywords :
cathodes; power semiconductor diodes; resistors; FWD operation; RFC technology; anode region; ballast resistance; ballast resistor; current filament; diode; high voltage free wheeling diodes; local heating; relaxed field-of-cathode; reverse recovery operation; safe operation area; Anodes; Cathodes; Electronic ballasts; Resistance; Semiconductor optical amplifiers; Silicon; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
ISSN :
1943-653X
Print_ISBN :
978-1-4244-8425-6
Type :
conf
DOI :
10.1109/ISPSD.2011.5890799
Filename :
5890799
Link To Document :
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