Title :
Optical Gain Analysis of Strain Compensated InGaN-AlGaN Quantum Well Active Regions for Lasers Emitting at 420-500 nm
Author :
Zhao, Hongping ; Arif, Ronald A. ; Ee, Yik-Khoon ; Tansu, Nelson
Author_Institution :
Lehigh Univ., West Bethlehem
Abstract :
Strain-compensated InGaN quantum wells with tensile AlGaN barriers are analyzed as improved gain media for laser diodes emitting at 420-500 nm. The optical gain analysis, taking into account spontaneous and piezoelectric polarizations, exhibits significant improvement in the peak optical gain and differential gain for the strain compensated structures.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light polarisation; piezoelectricity; quantum well lasers; wide band gap semiconductors; InGaN-AlGaN; InGaN-AlGaN - Interface; differential gain; gain media; laser diodes; optical gain; piezoelectric polarizations; quantum well active regions; quantum well laser; strain compensated structures; tensile AlGaN barriers; wavelength 420 nm to 500 nm; Aluminum gallium nitride; Biomedical optical imaging; Capacitive sensors; Charge carrier density; Gallium nitride; Light emitting diodes; Performance gain; Piezoelectric polarization; Quantum well lasers; Stimulated emission;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
Conference_Location :
Newark, DE
Print_ISBN :
978-1-4244-1431-4
DOI :
10.1109/NUSOD.2007.4349028
