Title :
A study on the high-temperature subthreshold slope in SOI MOSFETs
Author :
Rudenko, T. ; Lysenko, V. ; Rudenko, A. ; Kilchytska, V. ; Colinge, J.P.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
fDate :
6/21/1905 12:00:00 AM
Abstract :
In this paper, the validity of a classical expression for the subthreshold swing in SOI MOSFETs is revised for high-temperature conditions. Using numerical simulation, it is demonstrated that at high temperatures (above 150°C) the depletion approximation is no longer valid, and the free carriers must be taken into account in the determination of the effective substrate capacitance. Another correction must be introduced into the classical expression to account for the inversion layer broadening caused by lowering the surface electric field in a weak inversion region with temperature
Keywords :
MOSFET; high-temperature electronics; semiconductor device models; silicon-on-insulator; 150 C; SOI MOSFET; depletion approximation; high temperature subthreshold slope; inversion layer; numerical simulation; substrate capacitance; surface electric field; Capacitance; Doping; MOSFETs; Semiconductor films; Semiconductor thin films; Silicon; TV; Temperature dependence; Thin film devices; Tiles;
Conference_Titel :
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location :
Berlin
Print_ISBN :
0-7803-5795-7
DOI :
10.1109/HITEN.1999.827462
