Title :
Advanced study of ISO VPE IR photosensitive HgCdTe/CdTe structure
Author :
Vlasenko, A. ; Babentsov, V. ; Rudoy, I. ; Vlasenko, Z.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
In this paper some of our results related to the study of a HgCdTe/CdTe graded structure grown by ISO VPE on CdTe and ZnCdTe substrates are presented. Particularly the initial stage of growth, defects, substrate-epilayer interaction and photoelectrical properties are given special attention. The possibility of producing two mercury enriched contact layers on the front and back sides of the photodetector is shown. The influence of the built-in charge layer of the geometrical boundary between the substrate and epilayer on the spectral distribution of the photosensitivity is discussed
Keywords :
II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; photodetectors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; HgCdTe-CdTe; HgCdTe/CdTe graded structure; IR photosensitivity; ISO VPE growth; built-in charge layer; contact layer; defects; photodetector; photoelectrical properties; spectral distribution; substrate-epilayer interaction; Charge carrier lifetime; Crystallization; Grain boundaries; ISO; Life estimation; Lighting; Mercury (metals); Surface morphology; Tellurium; Zinc;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500833
