Title :
Effect of oxygen annealing temperature on AlGaN/GaN HEMTs
Author :
Seok, Ogyun ; Kim, Young-Shil ; Lim, Jiyong ; Han, Min-Koo
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
We have investigated an effect of oxygen annealing temperature on the leakage current and breakdown voltage of AlGaN/GaN HEMTs. The breakdown voltage of 830 V and a low drain leakage current of 1.2 nA/mm at VDS= 50 V and VGS= -5 V are exhibited by employing oxygen annealing at 550°C. The blocking characteristics are improved with increasing annealing temperature up to 550°C due to high density of deep traps generated by oxygen annealing. However, the blocking characteristics of the annealed device were degraded when the annealing temperature exceeds 550°C due to thermal damage on the surface of AlGaN/GaN HEMTs.
Keywords :
III-V semiconductors; electric breakdown; high electron mobility transistors; leakage currents; AlGaN-GaN; HEMT; blocking characteristics; breakdown voltage; leakage current; oxygen annealing temperature; temperature 550 C; thermal damage; voltage -5 V; voltage 50 V; voltage 830 V; Aluminum gallium nitride; Annealing; Gallium nitride; HEMTs; Leakage current; Logic gates; MODFETs;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890834
