DocumentCode :
1692831
Title :
Evaluation of process variability on current for nanotechnologies devices
Author :
Meinhardt, Cristina ; Reis, Ricardo
Author_Institution :
Comput. Sci. Center - C3, Fed. Univ. of Rio Grande - FURG, Rio Grande, Brazil
fYear :
2012
Firstpage :
1
Lastpage :
4
Abstract :
The continuous shrinking of devices has introduced new challenges to integrated circuit design, mainly to deal with the parametric variations in process parameters. This paper presents an evaluation of the process variability on the current Ids of nanotechnologies devices, individually and simultaneously, taking into account the correlation among them. The results show that the deviation from mean value is quite significant ≈ 16% for high performance models. The variation of L has the dominant effect on the overall variation of the device in high performance models while the dominant effect on the overall variation of the device in low power models still being due to Vth variations. Lastly, the effect of process parameter variations deteriorates with technology scaling, with a considerable increase in the deviation from the 22 nm to 16 nm technology.
Keywords :
integrated circuit design; low-power electronics; nanotechnology; dominant effect; high performance models; integrated circuit design; low power models; nanotechnologies devices; parametric variations; process parameter variations; process variability; technology scaling; Integrated circuit modeling; Logic gates; MOSFETs; Nanoscale devices; Performance evaluation; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (LASCAS), 2012 IEEE Third Latin American Symposium on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4673-1207-3
Type :
conf
DOI :
10.1109/LASCAS.2012.6180361
Filename :
6180361
Link To Document :
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